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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP514 DESCRIPTION *Continuous Collector Current-IC= -5A *Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min.) *Collector Power Dissipation: PC= 20W @TC 100 APPLICATIONS *Designed for power amplifier and high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak ww w scs .i VALUE -150 -150 -5 -5 -7.5 -2 2 20 200 -65~200 UNIT V .cn mi e V V A A A Base Current-Continuous Collector Power Dissipation @Ta= 25 Collector Power Dissipation @TC100 Junction Temperature Storage Temperature PC W TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -30mA; IB= 0 IC= -2.5A; IB= -0.25A B TIP514 MIN -150 MAX UNIT V -1.0 -2.0 -2.2 -0.3 V V V mA mA mA IC= -5A; IB= -0.5A B IC= -5A; VCE= -4V VCE= -75V; IB= 0 B VCE= -150V; VBE= 0 VCE= -75V; VBE= 0, TC=150 w ww sem isc . VEB= -2.5V; IC= 0 VEB= -5V; IC= 0 IC= -2.5A; VCE= -4V IC= -5A; VCE= -4V .cn i -1.0 -2.0 -0.1 -1.0 150 30 15 isc Websitewww.iscsemi.cn 2 |
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